(China (Mainland))
Product Summary
The transistor MMBT3904 is designed for general purpose amplifier applications. It is housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
Parametrics
MMBT3904 maximum ratings: (1)Collector–Emitter Voltage VCEO: 40 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 6.0 Vdc; (4)Collector Current — Continuous IC: 200 mAdc.
Features
MMBT3904 features: (1)Total Device Dissipation TA = 25℃ PD 150 mW; (2)Thermal Resistance, Junction to Ambient RθJA 833 ℃/W; (3)Junction and Storage Temperature TJ, Tstg –55 to +150 ℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||
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 MMBT3904 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
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MMBT3904,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS SW TAPE-7 |
Data Sheet |
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MMBT3904_D87Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
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MMBT3904_L99Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Gen Purp Amp |
Data Sheet |
Negotiable |
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MMBT3904_NL |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN GEN PUR -Pb |
Data Sheet |
Negotiable |
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 |
MMBT3904_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
Negotiable |
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MMBT3904LP-7 |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) NPN SM SIG 60V VCBO 40V VCEO 6.0 VEBO |
Data Sheet |
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MMBT3904-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) 40V 300mW |
Data Sheet |
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