(China (Mainland))
Product Summary
The AO4600 is a field effect transistor which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
Parametrics
AO4600 maximum ratings: (1)Drain-Source Voltage: 30/-30V; (2)Gate-Source Voltage:卤12V(Ta=25鈩?; (3)Continuous Drain: 6.9/-5V(Ta=70鈩?; (4)Current A: 5.8/-4.2V; (5)Power dissipation: 2w(Ta=25鈩?, 1.44w(Ta=70鈩?; (6)Junction and Storage Temperature Range: -55 to 150鈩?
Features
AO4600 features: (1)n-channel: VDS (V) = 30V, ID = 6.9A (VGS = 10V), Rds< 27m惟, < 32m惟, < 50m惟; (2)p-channel: VDS (V) =- 30V, ID = -5A (VGS = 10V), Rds< 49m惟, < 64m惟, < 120m惟.
Diagrams
<IMG border=0 src="http://www.seekic.com/uploadfile/ic-mfg/201252912028972.jpg">
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Pricing (USD) |
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 AO4600 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||
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AO4600 |
Other |
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Data Sheet |
Negotiable |
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AO4601 |
Other |
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Data Sheet |
Negotiable |
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AO4604 |
Other |
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Data Sheet |
Negotiable |
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AO4629 |
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MOSFET N/P-CH 30V 6/5.5A 8SOIC |
Data Sheet |
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AO4614B |
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MOSFET DUAL P+N CH 40V 5A SOIC8 |
Data Sheet |
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AO4615 |
Other |
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Data Sheet |
Negotiable |
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