Product Summary
The MRF9120LR3 is a 880MHz, 120W, 26V lateral N-channel RF power MOSFET. It is designed for broadband commercial and industrial applications with frequencies from 865 to 895MHz.
Parametrics
Absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5 to +65Vdc; (2)Gate-Source Voltage, VGS: -0.5 to +15Vdc; (3)Storage Temperature Range, Tstg: -65 to +150℃; (4)Operating Junction Temperature, TJ: 200℃.
Features
Features: (1)Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 500 mA; (2)Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts (CW) Output Power; (3)Characterized with Series Equivalent Large-Signal Impedance Parameters; (4)Integrated ESD Protection; (5)Designed for Maximum Gain and Insertion Phase Flatness; (6)Excellent Thermal Stability; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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MRF9120LR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 120W 880MHZ NI860L FET |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
MRF9002NR2 |
Freescale Semiconductor |
Transistors RF MOSFET Power FR PWR FET ARRAY PFP-16N |
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Negotiable |
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MRF9002R2 |
Other |
Data Sheet |
Negotiable |
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MRF9002RS |
Other |
Data Sheet |
Negotiable |
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MRF9011LT1 |
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MRF9030 |
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MRF9030GNR1 |
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Data Sheet |
Negotiable |
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