(China (Mainland))
Product Summary
The BUK954R2-55B is the N-channel enhancement mode field-effect power transistor which uses a plastic package using Philips High-Performance Automotive Trench MOSTM technology. The applications of BUK954R2-55B include: automotive systems, 12V and 24V loads, motors, lamps and solenoids, general purpose power switching.
Parametrics
BUK954R2-55B maximum ratings:(1)source-drain (diode forward) voltage: IS = 40 A; VGS = 0 V, 0.85(typ), 1.2 V(max); (2)reverse recovery time: IS = 20 A;dIS/dt = -100 A/μs, 78(typ) ns; (3)recovered charge: VGS = -10 V; VDS = 30 V,171(typ) nC.
Features
BUK954R2-55B features: (1)Very low on-state resistance ; (2)Q101 compliant; (3)175 ℃ rated; (4)Logic level compatible.
Diagrams
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 BUK954R2-55B |
NXP Semiconductors |
MOSFET HIGH PERF TRENCHMOS |
Data Sheet |
Negotiable |
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BUK954R2-55B,127 |
NXP Semiconductors |
MOSFET HIGH PERF TRENCHMOS |
Data Sheet |
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