(China (Mainland))
Product Summary
The FLL200IB-2 is the Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make FLL200IB-2 ideally suited for base station applications.
Parametrics
FLL200IB-2 maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5V; (3)Total Power Dissipation: 83.3 W; (4)Storage Temperature:-65 to +175℃; (5)Channel Temperature: 175℃.
Features
FLL200IB-2 features: (1)High Output Power: P1dB = 42.5dBm (Typ.); (2)High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1); (3)High PAE: 34% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.
Diagrams
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 FLL2400IU-2C |
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Data Sheet |
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