Product Summary
The VQ1001P is a Quad N-Channel 30-V (D-S) MOSFET. The applications of it include: (1)Direct Logic-Level Interface: TTL/CMOS; (2)Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.; (3)Battery Operated Systems; (4)Solid-State Relays.
Parametrics
VQ1001P absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 150℃)TA= 25℃, ID: 0.83A; TA= 100℃, ID: 0.53A; (4)Pulsed Drain Currenta IDM: 3A; (5)Power Dissipation (Single) TA=25℃, PD: 1.3W; TA= 100℃, PD: 0.52W; (6)Thermal Resistance, Junction-to-Ambient (Single) RthJA: 96℃/W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
VQ1001P features: (1)Low On-Resistance: 0.85 Ω; (2)Low Threshold: 1.4 V; (3)Low Input Capacitance: 38 pF; (4)Fast Switching Speed: 9 ns; (5)Low Input and Output Leakage.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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VQ1001P |
Vishay/Siliconix |
MOSFET QD 30V 0.53A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
VQ1000J |
Vishay/Siliconix |
MOSFET QD 60V 0.225A |
Data Sheet |
Negotiable |
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VQ1000P |
Vishay/Siliconix |
MOSFET QD 60V 0.225A |
Data Sheet |
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VQ1000P-E3 |
Vishay/Siliconix |
MOSFET N-CH 60V 0.225A |
Data Sheet |
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VQ1001J |
Vishay/Siliconix |
MOSFET QD 30V 0.83A |
Data Sheet |
Negotiable |
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VQ1001P |
Vishay/Siliconix |
MOSFET QD 30V 0.53A |
Data Sheet |
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VQ1004J |
Vishay/Siliconix |
MOSFET QD 60V 0.46A |
Data Sheet |
Negotiable |
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