(China (Mainland))
Product Summary
The IRF044 HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. The IRF044 is suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Parametrics
IRF044 maximum ratings: (1)VGS = 0V, TC = 25℃ , Continuous Drain Current: 40A; (2)VGS = 0V, TC = 100℃, Continuous Drain Current: 27A; (3)Pulsed Drain Current: 176A; (4)TC = 25℃ Max. Power Dissipation: 125 W; (5)Linear Derating Factor: 1.0 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy: 340mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Operating Junction/Storage Temperature Range: -55 to +150℃.
Features
IRF044 features: (1)Repetitive Avalanche Ratings; (2)Dynamic dv/dt Rating; (3)Hermetically Sealed; (4)Simple Drive Requirements; (5)Ease of Paralleling.
Diagrams
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 IRF044 |
Other |
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Data Sheet |
Negotiable |
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IRF044SMD |
Other |
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Data Sheet |
Negotiable |
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