Product Summary
The BZG03C10-E3 is a zener diode.
Parametrics
BZG03C10-E3 absolute maximum ratings: (1)Power dissipation RthJA < 25 K/W, Tamb = 100 ℃ Pdiss: 3 W; (2)RthJA < 100 K/W, Tamb = 50 ℃ Pdiss: 1.25 W; (3)Non repetitive peak surge power dissipation tp = 100 μs sq.pulse prior to surge, Tj = 25 ℃ PZSM: 600 W; (4)Junction temperature Tj: 150 ℃; (5)Storage temperature range Tstg: - 65 to + 150 ℃.
Features
BZG03C10-E3 features: (1)BZG03C10-E3 features: Glass passivated junction; (2)High reliability; (3)Voltage range 10 V to 270 V; (4)Fits onto 5 mm SMD footpads; (5)Wave and reflow solderable; (6)Lead (Pb)-free component; (7)Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.
Diagrams
BZG01 |
Other |
Data Sheet |
Negotiable |
|
||||||
BZG03 |
Other |
Data Sheet |
Negotiable |
|
||||||
BZG03C |
Other |
Data Sheet |
Negotiable |
|
||||||
BZG03C10 |
Other |
Data Sheet |
Negotiable |
|
||||||
BZG03-C10 |
Other |
Data Sheet |
Negotiable |
|
||||||
BZG03-C100 |
Other |
Data Sheet |
Negotiable |
|